Electron transport in bulk and multiquantum barrier AlxGa1-xInP/GaInP n-i-n diodes

Joanne Ni Chroinin; Alan P. Morrison

doi:10.1117/12.605141

3 June 2005 Electron transport in bulk and multiquantum barrier Al_xGa_1-xInP/GaInP n-i-n diodes

Proceedings Volume 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks; (2005) https://doi.org/10.1117/12.605141
Event: OPTO-Ireland, 2005, Dublin, Ireland

Abstract

The I-V characteristics of AlGaInP/GaInP bulk and multiquantum barrier n-i-n diodes between 20 and 300 K were measured with pA current resolution. When analysed using a thermionic emission model, measured activation energies in the bulk structures were close to the expected conduction band offset. The interplay of other transport mechanisms, including Fowler-Nordheim tunneling and Poole-Frenkel emission was investigated in both the bulk and multiquantum barrier diodes. Transition points between different regimes were observed. Similarities and differences were observed for the bulk and multiquantum barrier diodes. Measured Fowler-Nordheim barrier heights in the bulk barrier diodes agree well with those derived from simulations except in the case of the indirect material at forward bias.

Citation Download Citation

Joanne Ni Chroinin and Alan P. Morrison "Electron transport in bulk and multiquantum barrier Al_xGa_1-xInP/GaInP n-i-n diodes", Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); https://doi.org/10.1117/12.605141

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