Development and evaluation of an F2 laser for immersion interference lithography at 157nm

Yasuo Itakura; Youichi Kawasa; Osamu Wakabayashi; Masato Moriya; Shinji Nagai; Akira Sumitani; Takuya Hagiwara; Toshiyuki Ishimaru; Shou Tsuji; Kiyoshi Fujii; Wataru Wakamiya

doi:10.1117/12.599512

12 May 2005 Development and evaluation of an F₂ laser for immersion interference lithography at 157nm

Yasuo Itakura, Youichi Kawasa, Osamu Wakabayashi, Masato Moriya, Shinji Nagai, Akira Sumitani, Takuya Hagiwara, Toshiyuki Ishimaru, Shou Tsuji, Kiyoshi Fujii, Wataru Wakamiya

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.599512
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

A two-beam interference lithography system based on a line-selected F2 laser has been developed. Resist patterns with a 60nm line and space (L&S) resolution were produced by the interferometer by F2 immersion lithography. The F2 laser performance had been especially optimized for this application. The spectral emission at the 157.53nm line was less than 1% of the main line emission at 157.63nm. The main line had a deconvolved spectral bandwidth of 0.84 pm (full width at half maximum (FWHM)). The degree of horizontal linear polarization was above 0.73 and the visibility of spatial coherence was larger than 0.83 at a pinhole distance of 0.1mm.

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Yasuo Itakura, Youichi Kawasa, Osamu Wakabayashi, Masato Moriya, Shinji Nagai, Akira Sumitani, Takuya Hagiwara, Toshiyuki Ishimaru, Shou Tsuji, Kiyoshi Fujii, and Wataru Wakamiya "Development and evaluation of an F₂ laser for immersion interference lithography at 157nm", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.599512

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