Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Sergei V. Postnikov; Emilien Robert; Philippe Thony; Kyle Patterson; Scott Warrick; Daniel Henry; Andres Torres; Olivier Toublan

doi:10.1117/12.601756

12 May 2005 Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Sergei V. Postnikov, Emilien Robert, Philippe Thony, Kyle Patterson, Scott Warrick, Daniel Henry, Andres Torres, Olivier Toublan

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.601756
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The merits of complementary double dipole illumination using 193 nm exposure wavelength with water immersion for 45 nm and 32 nm nodes is investigated. Off-axis dipole illumination shows a significant improvement in the resolution for lines and spaces oriented along the direction perpendicular to the dipole orientation. However, there is also a significant loss of resolution along the dipole direction. Consequently, two dimensional circuit patterning requires a double exposure to improve the resolution in both directions. Thus, the original layout must be decomposed into two masks: one containing the features to be primarily imaged with one dipole and another one with features to be imaged in the complementary direction. The horizontal and vertical lines must be selected and protective patches are required on each mask to protect the pattern formed by the complementary exposure. The potential capability of the dipole illumination used in conjunction with the immersion lithography for 45 nm and 32 nm nodes will be described. The Mentor Graphic approach based on the model assisted decomposition for the Double Dipole Lithography (DDL) was applied to the small clips of the 2D layout of the gate level for random logic. The lithographic process window and the CD control will be estimated through simulation.

Citation Download Citation

Sergei V. Postnikov, Emilien Robert, Philippe Thony, Kyle Patterson, Scott Warrick, Daniel Henry, Andres Torres, and Olivier Toublan "Assessment of complementary double dipole lithography for 45nm and 32nm technologies", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.601756

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available