Paper
4 May 2005 Impregnation of resist with functional molecules using supercritical fluid: a new approach to resist engineering for advanced lithography
Author Affiliations +
Abstract
This paper describes an innovative approach to lithography processes using a supercritical fluid. The key idea is to improve a resist by exploiting the special properties of supercritical fluid: it is a good solvent with good diffusivity. The results of this study show that various kinds of molecules can be dissolved in supercritical carbon dioxide, and distributed uniformly throughout a resist. For example, the etch rate of ArF resist is reduced when functional molecules with a high etching durability are added to it. The unique feature of this technique is that the resist can be modified after exposure and development without damaging resist patterns. This technique constitutes a revolutionary way of enhancing resists that could have a big impact on resist composition and processes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Namatsu and Mitsuru Sato "Impregnation of resist with functional molecules using supercritical fluid: a new approach to resist engineering for advanced lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.597709
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KEYWORDS
Molecules

Etching

Lithography

Ultraviolet radiation

Absorbance

Optical lithography

Photoresist processing

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