Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning

Jean-Damien Chapon; Catherine Chaton; Pascal Gouraud; Marcel Broekaart; Scott Warrick; Isabelle Guilmeau; Yorick Trouiller; Jerome Belledent

doi:10.1117/12.601742

4 May 2005 Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning

Jean-Damien Chapon, Catherine Chaton, Pascal Gouraud, Marcel Broekaart, Scott Warrick, Isabelle Guilmeau, Yorick Trouiller, Jerome Belledent

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Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.601742
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

For the past several technology nodes, switching from spin-on organic Bottom Anti-Reflective Coatings (BARCs) to CVD organic BARCs has been proposed as the optimal solution for critical photolithography processes. However, spin-on BARC film stacks have still have widespread adoption for a variety of reasons. Despite the continuous improvement in lithographic techniques, the current challenges for 65nm (half pitch) process integration demand that critical photo processes sacrifice significant pattern collapse margin to maintain high aspect ratios. In the mean time, pressure on CD control has also continued to increase. As a result of these trends, the choice and the optimization of hard mask and antireflective solutions are a critical area of process development. This paper presents an update on the tradeoffs between spin-on organic BARCs and CVD organic integrations when applied to 65nm gate patterning constraints. The proposed Carbon containing CVD stack has shown great advantages in term of reflectivity control and in term of pattern collapse margin leading to an overall improved lithographic process window. On the other hand, satisfactory critical dimensions, without organic BARC, were seen when studying parameters such as, line width roughness (LWR), profiles and rework impact. These statements have also been assessed with some promising etch and electrical results.

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Jean-Damien Chapon, Catherine Chaton, Pascal Gouraud, Marcel Broekaart, Scott Warrick, Isabelle Guilmeau, Yorick Trouiller, and Jerome Belledent "Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.601742

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KEYWORDS

Chemical vapor deposition

Etching

Critical dimension metrology

Reflectivity

Carbon

Line width roughness

Semiconducting wafers

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