Paper
25 March 2005 Fabrication of III-V/polymer optical nanowires and nanogratings for nanophotonic devices
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Abstract
One of the most important concerns in photonic integrated circuits is the reduction of the propagation path for optical interconnections leading so to a size decrease of active and passive components such as filters or multichannel wavelength (de)multiplexers. In this aim, it is necessary to use monomode optical waveguides with a high optical confinement via a strong index contrast. So the structures reported here consist in 300 nm-wide GaAs nano-wires and nano-gratings inserted in a polymer matrix. The technological process we present hereby allows fabricating symmetric waveguides with square cross-section.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Denis Lauvernier, Jean-Pierre Vilcot, and Didier Decoster "Fabrication of III-V/polymer optical nanowires and nanogratings for nanophotonic devices", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.590418
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KEYWORDS
Gallium arsenide

Etching

Waveguides

Nanowires

Argon

Polymers

Reactive ion etching

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