Paper
25 March 2005 Optimum resonant tunnelling injection and influence of doping density on the performance of THz bound-to-continuum cascade lasers
Jesse Alton, Stefano Barbieri, Chris Worral, Mark Houghton, Harvey E. Beere, Edmund L. Linfield, David A. Ritchie
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Abstract
In this work we have investigated the operation of a recently demonstrated bound-to-continuum quantum cascade laser emitting at 2.9 THz under different active region doping densities. In addition, we have studied the injection efficiency as a function of the thickness of the Al0.15Ga0.85As barrier controlling the tunnel coupling between the superlattice miniband and the upper state of the laser transition. By tuning these two parameters threshold current densities as low as 52 A/cm2 and 83 A/cm2 were obtained at 5 K, corresponding to a reduction over the base design of 55% and 25% respectively. In both cases we attribute the improved threshold performance to a reduction of the parasitic leakage current. The decrease in threshold was always at the expense of a smaller laser dynamic operating range, which ultimately limited maximum operating temperatures in pulsed and continuous wave mode to 95 K and 80 K respectively.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jesse Alton, Stefano Barbieri, Chris Worral, Mark Houghton, Harvey E. Beere, Edmund L. Linfield, and David A. Ritchie "Optimum resonant tunnelling injection and influence of doping density on the performance of THz bound-to-continuum cascade lasers", Proc. SPIE 5727, Terahertz and Gigahertz Electronics and Photonics IV, (25 March 2005); https://doi.org/10.1117/12.590699
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Cited by 17 scholarly publications.
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KEYWORDS
Semiconducting wafers

Doping

Quantum cascade lasers

Terahertz radiation

Laser damage threshold

Pulsed laser operation

Waveguides

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