Paper
20 January 2005 Investigation of sulfur-doped n-type diamond thin films
Qingxun Zhao, Yongjie Wang, Baoting Liu, Xiaodong Qiao, Zheng Yan, Yinshun Wang
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Abstract
High-quality Sulfur doped n-type diamond thin films have been successfully synthesized via glow plasma assisted hot filament chemical vapor deposition using gas mixtures of methane, hydrogen, Argon and hydrogen sulfide. Impacts of the volume ratio of hydrogen sulfide to methane RS/Con the structural and physical properties of the films have been systematic ally studied using various techniques such as Hall effect measurement, x-ray diffraction (XRD) and atom force microscope. We found that the carrier mobility is 474 cm2V-1S-1 and the electrical conductivity is 1.45Ω-1·cm-1at RS/C=6800ppm. The sheet resistivities of the films increase with increase of RS/C, reach the maximum at RS/C of 6200ppm, and then begin to decrease. Also, with increase of RS/C, a linear increase in the conductivities of the films is found, which is believed that higher RS/Cis favorable for the increase of electrical conductivity of sulfur doped diamond thin films.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qingxun Zhao, Yongjie Wang, Baoting Liu, Xiaodong Qiao, Zheng Yan, and Yinshun Wang "Investigation of sulfur-doped n-type diamond thin films", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); https://doi.org/10.1117/12.573766
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KEYWORDS
Diamond

Sulfur

Thin films

Chemical vapor deposition

Hydrogen

Methane

Crystals

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