Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers

Yi-An Chang; Hao-Chung Kuo; Ya-Hsien Chang; Shing Chung Wang; Li-Hong Laih

doi:10.1117/12.577321

20 January 2005 Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers

Yi-An Chang, Hao-Chung Kuo, Ya-Hsien Chang, Shing Chung Wang, Li-Hong Laih

Author Affiliations +

Proceedings Volume 5628, Semiconductor Lasers and Applications II; (2005) https://doi.org/10.1117/12.577321
Event: Photonics Asia, 2004, Beijing, China

Abstract

In this article, the laser performance of the 1300-nm In_0.4Ga_0.6As_0.986N_0.014/GaAs_1-xN_x quantum well lasers with various GaAs_1-xN_x strain compensated barriers (x=0%, 0.5%, 1%, and 2%) have been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x=0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient T0 values of 110 K and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1-xNx barrier increases more than 1% the laser performance degrades rapidly and the T0 value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In_0.4Ga_0.6As_0.986N_0.014 QW and GaAs_1-xN_x barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs_1-xN_x quantum-well lasers are also investigated.

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Yi-An Chang, Hao-Chung Kuo, Ya-Hsien Chang, Shing Chung Wang, and Li-Hong Laih "Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); https://doi.org/10.1117/12.577321

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