Calculating transport properties of nanodevices

Eric F. Darve; Song Li; Yuriy Teslyar

doi:10.1117/12.571494

29 December 2004 Calculating transport properties of nanodevices

Eric F. Darve, Song Li, Yuriy Teslyar

Proceedings Volume 5593, Nanosensing: Materials and Devices; (2004) https://doi.org/10.1117/12.571494
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

The Non Equilibrium Green's Function (NEGF) method is a powerful technique to compute quantum transport properties of nanoscale electronic devices. It is applicable to a wide range of devices, ranging from nano transistors, molecular switches, nano wires... Accurately simulating such devices often requires a 2D or a full 3D model. This leads to a large computational expense. We review existing methods for the fast computation of the density of charge using the Schrodinger-Poisson equation, and propose a new algorithm which has a significantly lower computational cost and is exact (in the absence of computer roundoff errors). The algorithm is applicable in the presence of various boundary conditions for the source, drain and gate regions, and for devices of arbitrary geometry.

Citation Download Citation

Eric F. Darve, Song Li, and Yuriy Teslyar "Calculating transport properties of nanodevices", Proc. SPIE 5593, Nanosensing: Materials and Devices, (29 December 2004); https://doi.org/10.1117/12.571494

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