Properties of ZnO nanotips selectively grown by MOCVD

Hanhong Chen; Jian Zhong; Gaurav Saraf; Zheng Zhang; Yicheng Lu; Linus A. Fetter; Chien-Shing Pai

doi:10.1117/12.571509

19 January 2005 Properties of ZnO nanotips selectively grown by MOCVD

Hanhong Chen, Jian Zhong, Gaurav Saraf, Zheng Zhang, Yicheng Lu, Linus A. Fetter, Chien-Shing Pai

Proceedings Volume 5592, Nanofabrication: Technologies, Devices, and Applications; (2005) https://doi.org/10.1117/12.571509
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

We report the catalyst-free growth of ZnO nanotips by metalorganic chemical vapor deposition (MOCVD) on various substrates, including c-sapphire, (100) Si, titanium, glass and SiO₂. Structural, optical, and electrical properties of ZnO nanotips are investigated. ZnO nanotips are found to be single crystalline and oriented along the c-axis normal to the growth plane. The nanotips exhibit dominant free excitonic transition and enhanced luminescence efficiency with negligible deep-level emission. Controllable in situ Ga doping during MOCVD growth reduces the resistivity of ZnO nanotips. Selective growth of ZnO nanotips has been achieved on patterned Ti/r-Al₂O₃, SiO₂/r-Al₂O₃, and silicon-on-sapphire (SOS) substrates. It provides the potential to integrate ZnO nanotips and ZnO epitaxial films on a single patterned substrate for various device applications.

Citation Download Citation

Hanhong Chen, Jian Zhong, Gaurav Saraf, Zheng Zhang, Yicheng Lu, Linus A. Fetter, and Chien-Shing Pai "Properties of ZnO nanotips selectively grown by MOCVD", Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); https://doi.org/10.1117/12.571509

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