Performance of novel 198.5-nm wavelength mask inspection system for 65-nm node and beyond optical lithography era

Dong-Hoon Chung; Katsumi Ohira; Nobuyuki Yoshioka; Kenichi Matsumura; Toru Tojo; Masao Otaki

doi:10.1117/12.578592

6 December 2004 Performance of novel 198.5-nm wavelength mask inspection system for 65-nm node and beyond optical lithography era

Dong-Hoon Chung, Katsumi Ohira, Nobuyuki Yoshioka, Kenichi Matsumura, Toru Tojo, Masao Otaki

Author Affiliations +

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.578592
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

In 65nm node and some more technology node probably may go with current optical lithography and industry has predicted many challenges. In patterning point of view, quality and cost of mask became more and more important than ever. Particularly, mask defect engineering technology is key area not only inspect the defects but also mask process monitoring and improvements. In mask inspection technology there were a lot of new progresses to enhance the defect inspection sensitivity and stability. The key solution to achieve better sensitivity may be short inspection wavelength and adequate detection algorithm. In this paper, we will propose defect size specifications of 65nm and beyond optical mask with various OPC and RET environments. In addition, we will present initial data of newly developed 198.5nm inspection wavelength system. Through this study, we found future optical mask faces new challenges in defect inspection and to solve these problems, we need advanced mask inspection system and collaborations among patterning related fields.

Citation Download Citation

Dong-Hoon Chung, Katsumi Ohira, Nobuyuki Yoshioka, Kenichi Matsumura, Toru Tojo, and Masao Otaki "Performance of novel 198.5-nm wavelength mask inspection system for 65-nm node and beyond optical lithography era", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.578592

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