High-speed CMOS-compatible photodetectors for optical interconnects

Miriam R. Reshotko; David L. Kencke; Bruce Block

doi:10.1117/12.557049

22 October 2004 High-speed CMOS-compatible photodetectors for optical interconnects

Miriam R. Reshotko, David L. Kencke, Bruce Block

Proceedings Volume 5564, Infrared Detector Materials and Devices; (2004) https://doi.org/10.1117/12.557049
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

We have developed high-speed germanium (Ge) photodetectors using standard complementary metal-oxide-semiconductor (CMOS) process technology. We describe the design considerations that led to the devices reported on here. We have characterized these detectors in terms of the following detector metrics: speed, responsivity, dark current and capacitance. The photodetectors exhibit responsivities greater than 0.2 A/W at both 850 and 1550 nm, making them compatible with both long- and short-haul communication systems. Impulse response measurements at both of the above wavelengths indicate 3 dB cutoff frequencies greater than 10 GHz and open eye diagrams have been measured at 20 Gb/s. Dark currents are on the order of 10 to 1000 μA at a bias of 1 V depending on device size. Capacitances measured were on the order of 0.1-10 fF. The performance of the detectors indicates that they are suitable for high speed on-chip optical links. Device simulation models indicate that the fundamental upper limit on the speed of the devices, based on ideal material properties, is high enough to support a number of process generations. Calibration of the models to our experimental data is presented, and areas for improvement are defined.

Citation Download Citation

Miriam R. Reshotko, David L. Kencke, and Bruce Block "High-speed CMOS-compatible photodetectors for optical interconnects", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.557049

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