Paper
22 October 2004 Fundamental physics and practical realization of mid-infrared photodetectors
Anthony Krier, Parthasarathi Chakrabarti, Honghai Gao, Y. Mao, Xing-Liang Huang, Victor V. Sherstnev
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Abstract
The fabrication and characterization of heterojunction phtodiodes for room temperature operation in the mid-infrared (2-5 μm) spectral range is described. Liquid phase epitaxy was employed to fabricate two different devices containing In0.97Ga0.03As and InAs0.89Sb0.11 active regions appropriate for phtodetection at 3.3 μm and 4.6 μm, corresponding to the absorption bands of methane and carbon monoxide. Basic detector characteristics have been measured and were found to compare favourbly with other available detectors in this wavelength range. A simple analystical model was developed to help design and study the corresponding device physics governing the performance of the detectors and was found to give good agreement with the experimentally measured values.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony Krier, Parthasarathi Chakrabarti, Honghai Gao, Y. Mao, Xing-Liang Huang, and Victor V. Sherstnev "Fundamental physics and practical realization of mid-infrared photodetectors", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.555684
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KEYWORDS
Photodiodes

Sensors

Photodetectors

Indium arsenide

Heterojunctions

Diffusion

Doping

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