Paper
22 October 2004 Fabrication of SiC:Ge: waveguide wavelength selector using ion implantation and laser deposition techniques
Abdalla M. Darwish, Brent D. Koplitz, Nadia Majeed, Trivia Frazier, Robert Combs, Daryush Ila, Nikolai V. Kukhtarev
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Abstract
A waveguid-wavelength selector was fabricated using ion implanted SiC substrate and Ga/Ge thin film using laser ablation techniques. The device was used as a CO2 laser lines selector. The theory of the operation is based on visibility of the CO2 laser to produce a thermal grating which drives the optical selector with maximum efficiency of 46 MHz of laser offset between 10P20 and 10P18 CO2 laser lines. The threshold of the thermal damage of the device was overcomed using a miniature heat exchanger, which is triggered by the excess of the thermal heat during the operation. The different potential use of the device will be presented as well.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abdalla M. Darwish, Brent D. Koplitz, Nadia Majeed, Trivia Frazier, Robert Combs, Daryush Ila, and Nikolai V. Kukhtarev "Fabrication of SiC:Ge: waveguide wavelength selector using ion implantation and laser deposition techniques", Proc. SPIE 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X, (22 October 2004); https://doi.org/10.1117/12.559927
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KEYWORDS
Waveguides

Silicon carbide

Thin films

Carbon dioxide lasers

Germanium

Laser ablation

Chemical species

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