Low-frequency noise in SiGeC-based pMOSFETs

M. Jamal Deen; Ognian Marinov; David Onsongo; Sanjay Banerjee

doi:10.1117/12.548006

25 May 2004 Low-frequency noise in SiGeC-based pMOSFETs

M. Jamal Deen, Ognian Marinov, David Onsongo, Sanjay Banerjee

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.548006
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

The SiGeC ternary alloy seems to be an attractive material system for Si-based device applications, because the incorporation of a small amount of C in the high-mobility SiGe layer offers an additional degree of freedom for tuning the bandgap, band offsets and the lattice strain in group IV heterostructures. In this work, detailed low-frequency noise (LFN) results in SiGeC pMOSFETs are presented. Our experimental results in saturation regime of the SiGe MOSFET show that the noise in SiGeC MOSFETs at gate bias |V_GS-V_T|<0.4V can be referred to the gate terminal as a noise voltage S_VG=V_G², which implies (ΔN) fluctuation with correlated noise in the cap and SiGeC channel currents. Overall, the trend shows that the gate referred noise voltage scales inversely with the gate area, and that the variation of the noise level has log-normal distribution. Therefore, the noise in SiGeC MOSFETs can be expressed as S=S_avg*exp(t*σ_Np), where t=±1,...,±3 is a coefficient selected for desired confidence probability of 0.6,...,0.99 respectively, and σ is the standard deviation of the log-normal distribution of the noise level around its average S_avg, later given by (ΔN-Δμ) fluctuation in the cap layer and SiGeC channel of pMOSFET.

Citation Download Citation

M. Jamal Deen, Ognian Marinov, David Onsongo, and Sanjay Banerjee "Low-frequency noise in SiGeC-based pMOSFETs", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.548006

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