High-frequency low-noise amplifiers and low-jitter oscillators in SiGe:C BiCMOS technology

Wolfgang Winkler; Johannes Borngraeber; Bernd Heinemann; Frank Herzel; Rene Scholz

doi:10.1117/12.544513

25 May 2004 High-frequency low-noise amplifiers and low-jitter oscillators in SiGe:C BiCMOS technology

Wolfgang Winkler, Johannes Borngraeber, Bernd Heinemann, Frank Herzel, Rene Scholz

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.544513
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

This paper describes the design of noise-critical circuits for radio-frequency and high-speed digital applications in a SiGe:C BiCMOS technology. Starting with a figure of merit for the high-frequency noise behavior of bipolar transistors, challenges in the transistor design are formulated. It is shown that the addition of carbon to the base of a SiGe-HBT results in an excellent high-frequency noise behavior of the transistors. A first design of a differential three-stage low-noise amplifier for 60 GHz applications is presented having a gain of 18 dB at 50 GHz. Furthermore, a 60 GHz voltage-controlled oscillator is presented with a phase noise of -90 dBc/Hz at 1 MHz offset from the oscillation frequency. Using a first-order PLL model, we predict an rms jitter contribution to a 5 MHz-bandwidth PLL as low as 0.4 percent of the oscillation period. Possible applications include wireless and wired broadband communication as well as automotive radar.

Citation Download Citation

Wolfgang Winkler, Johannes Borngraeber, Bernd Heinemann, Frank Herzel, and Rene Scholz "High-frequency low-noise amplifiers and low-jitter oscillators in SiGe:C BiCMOS technology", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.544513

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