Paper
18 August 2004 UV-laser-based process for quantum well intermixing of III-V heterostructures
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Abstract
The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of a quantum well (QW) intermixing effect has been investigated in GaAs/AlGaAs QW heterostructures. The irradiation was carried out in an atmospheric environment with laser pulses of fluence between 60 and 90 mJ/cm2. Following the irradiation, the samples were annealed in a rapid thermal annealing furnace at temperatures ranging from 850 to 925°C. Compared with non-irradiated samples, a strong suppression of the bandgap shift has been observed in all laser irradiated samples. The suppression increased from 5 to 22 nm for samples irradiated with 88 mJ/cm2 pulses and annealed at 850 and 900°C, respectively. This increased thermal stability of excimer laser irradiated samples indicates the potential for developing a process for selective area bandgap engineering of large area GaAs/AlGaAs QW wafers.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonathan Genest, Jan J. Dubowski, and Vincent Aimez "UV-laser-based process for quantum well intermixing of III-V heterostructures", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.547948
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum wells

Excimer lasers

Gallium

Gallium arsenide

Aluminum

Annealing

Luminescence

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