GaAs IMPATT Sources

D. Masse; M. G. Adlerstein; L. H. Holway Jr.

doi:10.1117/12.948243

24 October 1985 GaAs IMPATT Sources

D. Masse, M. G. Adlerstein, L. H. Holway Jr.

Proceedings Volume 0544, Millimeter Wave Technology III; (1985) https://doi.org/10.1117/12.948243
Event: 1985 Technical Symposium East, 1985, Arlington, United States

Abstract

Amplifiers and oscillators, using one or more gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained on devices developed in our laboratory. Our approaches to diode modeling and circuit optimization are outlined.

Citation Download Citation

D. Masse, M. G. Adlerstein, and L. H. Holway Jr. "GaAs IMPATT Sources", Proc. SPIE 0544, Millimeter Wave Technology III, (24 October 1985); https://doi.org/10.1117/12.948243

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