Novel surface treatment of HgCdTe using hydrazine

Min Yung Lee; Hee Chul Lee

doi:10.1117/12.542042

30 August 2004 Novel surface treatment of HgCdTe using hydrazine

Min Yung Lee, Hee Chul Lee

Proceedings Volume 5406, Infrared Technology and Applications XXX; (2004) https://doi.org/10.1117/12.542042
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

Surface treatment is one of the key issues for fabricating long-wavelength infrared (LWIR) detectors having good performance. In this paper, a novel surface treatment using hydrazine has been proposed for HgCdTe and its validity has been confirmed with ellipsometry and C-V analysis. The fixed charge density and trap oxide charge density of hydrazine-treated sample have shown so small value of 1.29×10⁹ cm^-2 and 4.35×10¹⁰ cm^-2, respectively, comparing with those obtained with the conventional Br-MeOH-treated sample. In addition, the hydrazine-treated sample has shown high frequency characteristic in the C-V curve, which means the large effective minority carrier lifetime on the surface. By applying the new surface treatment using hydrazine to vacancy-doped wafers, LWIR photodiodes have been successfully fabricated. Current-voltage (I-V) characteristics of the hydrazine-treated Hg_0.77Cd_0.23Te diodes were also measured. Average R₀A products of these diodes with the junction area of 30x30 μm² were about 2.54 Ωcm², which satisfy 95% BLIP (background limited infrared photodetector) condition for LWIR photodiodes.

Citation Download Citation

Min Yung Lee and Hee Chul Lee "Novel surface treatment of HgCdTe using hydrazine", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.542042

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