Photoluminescence characterization of resonant-tunneling diodes based on the GaAs/AlGaAs long-period superlattices in the process of fabrication

A. A. Belov; Yu. A. Efimov; Alexandr L. Karuzskii; Igor P. Kazakov; Yu. A. Mityagin; V. N. Murzin; Anatolii V. Perestoronin; A. A. Pishchulin; S. S. Shmelev

doi:10.1117/12.562708

28 May 2004 Photoluminescence characterization of resonant-tunneling diodes based on the GaAs/AlGaAs long-period superlattices in the process of fabrication

A. A. Belov, Yu. A. Efimov, Alexandr L. Karuzskii, Igor P. Kazakov, Yu. A. Mityagin, V. N. Murzin, Anatolii V. Perestoronin, A. A. Pishchulin, S. S. Shmelev

Author Affiliations +

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562708
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

Photoluminescence technique is developed for characterization of resonant-tunneling diode structures formed of the GaAs/AlGaAs long-period superlattices in process of fabrication, which allows to estimate quality of the fabricated structure after the main stages of the technological process, including the MBE growth of multi-layer structure, lithography and annealing. The long-period multiquantum-well structures are promising for development of a new kind of solid-state intersubband-transition devices emitting the narrow band radiation in far infrared. This PL technique permits the corrections of the technology parameters to grow the structures with required properties and high homogeneity and can be used at room temperature as well as at low temperature.

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A. A. Belov, Yu. A. Efimov, Alexandr L. Karuzskii, Igor P. Kazakov, Yu. A. Mityagin, V. N. Murzin, Anatolii V. Perestoronin, A. A. Pishchulin, and S. S. Shmelev "Photoluminescence characterization of resonant-tunneling diodes based on the GaAs/AlGaAs long-period superlattices in the process of fabrication", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562708

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