Silicon backbone polymers as EUV resists

Juan Pablo Bravo-Vasquez; Young-Je Kwark; Christopher K. Ober; Heidi B. Cao; Hai Deng; Robert P. Meagley

doi:10.1117/12.536438

14 May 2004 Silicon backbone polymers as EUV resists

Juan Pablo Bravo-Vasquez, Young-Je Kwark, Christopher K. Ober, Heidi B. Cao, Hai Deng, Robert P. Meagley

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.536438
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

To fulfill industry requirements for EUV resists, the development of entirely new polymer platforms is needed. In order to address transparency issues, we have been studying low absorbance materials, specifically silicon based resist platforms. In this approach, we have synthesized and studied resist materials based on polysilanes, polycarbosilane, and polysilsesquiazanes. Poly(methylphenylsilane) was chemically modified to incorporate polar groups to enhance solubility in polar solvents and developer solution. Copolymerization of the modified polysilane with an acid sensitive monomer has been used to produce chemically amplified copolymers. Preliminary studies have shown promising behavior. Polysilsesquiazanes-based resist were synthesized and tested using a 248 nm stepper. They showed excellent lithographic performance but some issues, including long term stability, are presently unknown. Our strategy to produce silicon-based resist together with outgassing and lithography issues will be discussed.

Citation Download Citation

Juan Pablo Bravo-Vasquez, Young-Je Kwark, Christopher K. Ober, Heidi B. Cao, Hai Deng, and Robert P. Meagley "Silicon backbone polymers as EUV resists", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.536438

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