Paper
14 May 2004 Impact of BARC on SEM shrinkage of ArF resist
Shi Yong Lee, Myungsun Kim, Sangwoong Yoon, Kyung-Mee Kim, Jae Hyun Kim, Hyun-Woo Kim, Sang-Gyun Woo, Young Ho Kim, Sang-Mun Chon, Takahiro Kishioka, Yasuhisa Sone, Yasuyuki Nakajima
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Abstract
The shrinkage of resist pattern during in-line SEM measurement has been argued and studied as one of the problems unsettled for manufacturing with ArF photolithography. Many of attempts to solve this problem have focused their attentions on the improvement of resist and inspection equipment. We bring up BARC (bottom anti-reflective coating) as a new impact factor on SEM shrinkage of resist. Practically, although the same resist was employed, our shrinkage tests gave the results depending on the kind of BARC. Feature size and depth of focus also affect SEM shrinkage of resist. Effect of reflectivity on SEM shrinkage was evaluated by changing thickness of BARCs and resultantly was somewhat significant. In this paper, the BARC-dependent results of SEM shrinkage are analyzed and discussed to provide a possibility that BARC may have another function of reducing SEM shrinkage.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shi Yong Lee, Myungsun Kim, Sangwoong Yoon, Kyung-Mee Kim, Jae Hyun Kim, Hyun-Woo Kim, Sang-Gyun Woo, Young Ho Kim, Sang-Mun Chon, Takahiro Kishioka, Yasuhisa Sone, and Yasuyuki Nakajima "Impact of BARC on SEM shrinkage of ArF resist", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.533884
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Cited by 5 scholarly publications.
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KEYWORDS
Scanning electron microscopy

Reflectivity

Critical dimension metrology

Inspection

Polymers

Silicon

Line edge roughness

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