Characterization of outgassing for EUV technology

Vani Thirumala; Heidi B. Cao; Wang Yueh; Hokkin Choi; Victoria Golovkina; John Wallace; Paul F. Nealey; Don Thielman; Franco Cerrina

doi:10.1117/12.536052

14 May 2004 Characterization of outgassing for EUV technology

Vani Thirumala, Heidi B. Cao, Wang Yueh, Hokkin Choi, Victoria Golovkina, John Wallace, Paul F. Nealey, Don Thielman, Franco Cerrina

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.536052
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Outgassing of photoresists needs to be minimized to avoid contamination of optics. A new challenge for EUV photoresists - that was not encountered for previous lithography technologies - is that exposures will occur in a vacuum environment. In order to design resists that meet the outgassing requirements for EUV lithography, current EUV photoresists need to be tested to determine if there are any performance gaps. In this paper we will describe the outgassing set-up for the outgassing chamber at the University of Wisconsin, and document Intel’s best known method for collecting and analyzing EUV outgassing data. In addition we will present preliminary outgassing results to benchmark the performance of Intel’s outgassing procedure.

Citation Download Citation

Vani Thirumala, Heidi B. Cao, Wang Yueh, Hokkin Choi, Victoria Golovkina, John Wallace, Paul F. Nealey, Don Thielman, and Franco Cerrina "Characterization of outgassing for EUV technology", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.536052

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