Characterization of integrated optical CD for process control

Jackie Yu; Junichi Uchida; Youri van Dommelen; Rene Carpaij; Shaunee Cheng; Ivan Pollentier; Anita Viswanathan; Lawrence Lane; Kelly A. Barry; Nickhil Jakatdar

doi:10.1117/12.535949

24 May 2004 Characterization of integrated optical CD for process control

Jackie Yu, Junichi Uchida, Youri van Dommelen, Rene Carpaij, Shaunee Cheng, Ivan Pollentier, Anita Viswanathan, Lawrence Lane, Kelly A. Barry, Nickhil Jakatdar

Author Affiliations +

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.535949
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The accurate measurement of CD (critical dimension) and its application to inline process control are key challenges for high yield and OEE (overall equipment efficiency) in semiconductor production. CD-SEM metrology, although providing the resolution necessary for CD evaluation, suffers from the well-known effect of resist shrinkage, making accuracy and stability of the measurements an issue. For sub-100 nm in-line process control, where accuracy and stability as well as speed are required, CD-SEM metrology faces serious limitations. In contrast, scatterometry, using broadband optical spectra taken from grating structures, does not suffer from such limitations. This technology is non-destructive and, in addition to CD, provides profile information and film thickness in a single measurement. Using Timbre's Optical Digital Profililometry (ODP) technology, we characterized the Process Window, using a iODP101 integrated optical CD metrology into a TEL Clean Track at IMEC. We demonstrate the Optical CD's high sensitivity to process change and its insensitivity to measurement noise. We demonstrate the validity of ODP modeling by showing its accurate response to known process changes built into the evaluation and its excellent correlation to CD-SEM. We will further discuss the intrinsic Optical CD metrology factors that affect the tool precision, accuracy and its correlation to CD-SEM.

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Jackie Yu, Junichi Uchida, Youri van Dommelen, Rene Carpaij, Shaunee Cheng, Ivan Pollentier, Anita Viswanathan, Lawrence Lane, Kelly A. Barry, and Nickhil Jakatdar "Characterization of integrated optical CD for process control", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.535949

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KEYWORDS

Critical dimension metrology

Metrology

Semiconducting wafers

Process control

Cadmium

Integrated optics

Finite element methods

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