Paper
20 May 2004 Performance and stability of electron projection lithography tool
Author Affiliations +
Abstract
The world’s first electron projection lithography (EPL) R&D exposure tool was installed at our laboratory in June 2003, and we have evaluated its basic performance. The most feasible introduction of EPL into ultra-large-scale integration (ULSI) is mix-and-match use with an optical tool for critical layers at the 65 nm technology node (TN) and beyond. Overlay is the most crucial issue in mix-and-match lithography, so we focused on overlay in this evaluation. We found that the overlay performance of the EPL tool in mix-and-match use is 48.0 nm in the X direction and 45.7nm in the Y direction. To clarify details of deteriorated overlay accuracy, we divided it into 7 factors, finding underlayer distortion to be about 15 nm, residual reticle distortion 5 nm, subfield (SF) distortion 15 nm, main-field (MF) distortion 20 nm, reticle alignment accuracy 15 nm, repeatability 25 nm, and exposure field distortion 25 nm. We also demonstrated that overlay accuracy was 30 nm using previous overlay data.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Sakaue, Kaoru Koike, Hiroshi Takenaka, Takahiro Tsuchida, Fumihiro Koba, and Masaki Yamabe "Performance and stability of electron projection lithography tool", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.534892
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KEYWORDS
Distortion

Reticles

Semiconducting wafers

Photomasks

Optical alignment

Overlay metrology

Electron beam lithography

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