Exposure simulation of electron beam microcolumn lithography

Sang-Kon Kim; Hye-Keun Oh

doi:10.1117/12.537128

20 May 2004 Exposure simulation of electron beam microcolumn lithography

Sang-Kon Kim, Hye-Keun Oh

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.537128
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We propose an improved method to describe the electron-resist interaction based on Dill’s model for exposure simulation. For this purpose, Monte Carlo simulation was performed to obtain the energy intensity distribution in the chemically amplified resist. Tabulated Mott data for elastic scattering, Moller and Vriens cross sections for inelastic scattering, and Modified Bethe equation plus discrete energy loss for energy loss are used for the calculation of the energy intensity distribution. Through the electron-resist interaction, the energy intensity distribution changes resist components into the exposure production such as the photoacid concentration or the photoacid generator inside resists with various pattern shapes by using the modified Dill’s model. Our simulation profiles show a good agreement with experimental profiles.

Citation Download Citation

Sang-Kon Kim and Hye-Keun Oh "Exposure simulation of electron beam microcolumn lithography", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.537128

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