ZnO nanostructures on Si and SiO2 surfaces by diblock copolymer self-assembly

Agis A. Iliadis; Hasina Afroz Ali

doi:10.1117/12.523003

6 July 2004 ZnO nanostructures on Si and SiO₂ surfaces by diblock copolymer self-assembly

Agis A. Iliadis, Hasina Afroz Ali

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.523003
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The formation of self-assembled ZnO nanoclusters using diblock copolymers for self-assembly is reviewed and the development of the ZnO nanoclusters within two different copolymer systems -- poly styrene-acrylic acid and poly styrene methacrylic acid, with block repeat unit ratios of 159/63 and 318/78, respectively, are reported. Different copolymer systems were used to observe the size dependence of the nanoclusters on the molecular block lengths of the copolymers. The synthesis scheme of the nanoclusters relied on the thermodynamically driven microphase separation of the diblock copolymers in solid phase due to immiscibility of the covalently bonded polymers in the copolymer. The scheme involved the formation of ZnCl₂ nanoclusters on Si and SiO₂ surfaces by doping of the copolymer systems with ZnCl₂ in liquid phase at room temperature and application of the doped solution onto the surfaces by spin-on casting, followed by conversion to ZnO nanoclusters using a new dry technique of ozone exposure. The dry method effectively converted ZnCl₂, without any loss of ZnO during conversion and with better conversion rate than the wet chemical method developed previously. XPS verified the conversion to ZnO and AFM showed the spherical morphology of the nanoclusters. Technique was developed using RIE for obtaining stand-alone nanoclusters on both surfaces.

Citation Download Citation

Agis A. Iliadis and Hasina Afroz Ali "ZnO nanostructures on Si and SiO₂ surfaces by diblock copolymer self-assembly", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.523003

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