Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation

Saulius Marcinkevicius; Christine Carmody; Andreas Gaarder; Hark Hoe Tan; Chennupati Jagadish

doi:10.1117/12.526398

16 June 2004 Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation

Saulius Marcinkevicius, Christine Carmody, Andreas Gaarder, Hark Hoe Tan, Chennupati Jagadish

Proceedings Volume 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII; (2004) https://doi.org/10.1117/12.526398
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Heavy ion implantation into InP and In_0.53Ga_0.47As and rapid thermal annealing has been applied to produce materials with high resistivity, good mobility and ultrashort carrier lifetime, as required for ultrafast optoelectronic applications. Two implantation methods have been analyzed: Fe⁺ implantation into semi-insulating InP and InGaAs, and P⁺ implantation into p-doped InP and InGaAs. Both approaches allow production of layers with high sheet resistance, up to 10⁶ Ω/square for the P⁺-implanted compounds. Electron mobility in the high resistivity layers is of the order of 10² cm²V^-1s^-1. Carrier lifetimes, measured by the time-resolved photoluminescence and reflectivity, can be tuned from ~100 femtoseconds to tens of picoseconds by choosing implantation and annealing conditions. Measurements of carrier dynamics have shown that carrier traps act as efficient recombination centers, at least for the case of InP. The dependencies of electrical and ultrafast optical properties on the implantation dose and annealing temperature are determined by the interplay between shallow P and As antisite-related donors, deep Fe-related acceptors and defect complexes.

Citation Download Citation

Saulius Marcinkevicius, Christine Carmody, Andreas Gaarder, Hark Hoe Tan, and Chennupati Jagadish "Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.526398

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