Paper
8 July 2004 Advances in high-power diode-pumped ultraviolet lasers
Acle V. Hicks, Charles X. Wang, Gary Y. Wang
Author Affiliations +
Abstract
In the past five years diode-pumped Q-switched vanadate and YAG lasers with 355 nm and 266 nm output have advanced in power level and reliability and are now qualified in many industrial processes. In this paper we will discuss the design and performance of these lasers with consideration of available power and wavelength of laser diodes, selection of materials for the non-linear crystals, trades offs for end-pumped and side-pumped designs, and scaling of such lasers to higher power levels. Performance characteristics to be discussed include power and efficiency, ramping behavior, beam quality, and pulse-to-pulse stability.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Acle V. Hicks, Charles X. Wang, and Gary Y. Wang "Advances in high-power diode-pumped ultraviolet lasers", Proc. SPIE 5332, Solid State Lasers XIII: Technology and Devices, (8 July 2004); https://doi.org/10.1117/12.537912
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CITATIONS
Cited by 8 scholarly publications.
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KEYWORDS
Ultraviolet radiation

Crystals

Laser crystals

Pulsed laser operation

Nonlinear crystals

Semiconductor lasers

Q switched lasers

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