Paper
17 December 2003 Plasma and flow modeling of photomask etch chambers
Author Affiliations +
Abstract
The uniformity of critical dimensions is an important aspect of photomask fabrication, and the etch process can be improved by optimizing the geometry of the focus ring that surrounds the mask. Previous experimental results have shown that the focus ring can have a dramatic impact on the variability of critical dimensions on the photomask. Simulations were performed with the Hybrid Plasma Equipment Model (HPEM) software to examine the impact of different focus ring geometries on the plasma characteristics and improve the understanding of the experimental data.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edward Hammond, Jason O. Clevenger, and Melisa J. Buie "Plasma and flow modeling of photomask etch chambers", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518200
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KEYWORDS
Chlorine

Oxygen

Electrons

Plasma

Etching

Photomasks

Ions

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