Paper
17 December 2003 Interferometric-probe aberration monitors: aerial image and in-resist performance
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Abstract
Printed resist images of pattern and probe-based aberration monitors at 248 nm wavelength on an AIMS tool and a projection printer at several NA's will be presented. The results will demonstrate the measurement operation of these monitors compared to their performance as designed through simulation. Initial experiments indicate that the focus monitor has sufficient sensitivity to see systematic focus trends across the die. The focus monitor is estimated to measure focus to 25nm accuracy of 1/8 of the Rayleigh depth of focus, indicating a 2-8x improvement over determination of best focus via the point spread function. This work also shows that the optimum conditions for reading the targets is when the intensity of the probe is just at the exposure threshold of the resist. The target designed to detect coma abberation did not work as expected and this is likely due to the electromagnetic performance of the mask and high-NA vector imaging effects.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Garth C. Robins, Mircea Dusa, Bernd Geh, and Andrew Neureuther "Interferometric-probe aberration monitors: aerial image and in-resist performance", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518603
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KEYWORDS
Monochromatic aberrations

Printing

Photomasks

Point spread functions

Semiconducting wafers

Interferometry

Target detection

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