EUV substrate and blank inspection with confocal microscopy

Jan-Peter Urbach; Jan F. W. Cavelaars; Hal Kusunose; Ted Liang; Alan R. Stivers

doi:10.1117/12.518388

17 December 2003 EUV substrate and blank inspection with confocal microscopy

Jan-Peter Urbach, Jan F. W. Cavelaars, Hal Kusunose, Ted Liang, Alan R. Stivers

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518388
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

One of the key challenges for the successful implementation of EUV Lithography (EUVL) is the supply of defect free mask blanks. Obviously a reliable defect inspection is a prerequisite to achieve this goal. We report results from a EUVL blank inspection tool developed by Lasertec. The inspection principle of this tool is based on confocal microscopy at 488nm inspection wavelength. On quartz substrates a sensitivity of 60nm is demonstrated. On buried defects in the multilayer stack a reasonable capture rate down to approximately 25nm defect height has been measured. We compare these results to previously reported data on the wafer version (M350) of the current M1350.

Citation Download Citation

Jan-Peter Urbach, Jan F. W. Cavelaars, Hal Kusunose, Ted Liang, and Alan R. Stivers "EUV substrate and blank inspection with confocal microscopy", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518388

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