Paper
17 December 2003 Development of a new PSM film system for 157-nm extensible to high-transmission 193 nm lithography
Hans W. Becker, Jay Chey, Frank Sobel, Frank Schmidt, Markus Renno, Ute Buttgereit, Marie Angelopoulos, Guenter Hess, Konrad Knapp
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Abstract
A new attenuated phase shifting film system for 157 nm lithography is presented. The system is designed for 6% transmission but is tunable to higher values. Tests for laser stability and chemical durability show excellent performance. First results of defect density and phase and transmission homogeneity are presented. The phase shifting film achieves a high etch selectivity to the substrate. The film system is extensible to be used as a high transmission phase shifter for 193 nm lithography. Further it is feasible to repair the film system using electron beam repair technology.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans W. Becker, Jay Chey, Frank Sobel, Frank Schmidt, Markus Renno, Ute Buttgereit, Marie Angelopoulos, Guenter Hess, and Konrad Knapp "Development of a new PSM film system for 157-nm extensible to high-transmission 193 nm lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518339
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Phase shifts

Particles

Tantalum

Phase shifting

Lithography

Photomasks

Chemical lasers

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