193-nm haze contamination: a close relationship between mask and its environment

Eric Johnstone; Laurent Dieu; Christian Chovino; Julio Reyes; Dongsung Hong; Prakash Krishnan; Dianna Coburn; Christian Capella

doi:10.1117/12.518262

17 December 2003 193-nm haze contamination: a close relationship between mask and its environment

Eric Johnstone, Laurent Dieu, Christian Chovino, Julio Reyes, Dongsung Hong, Prakash Krishnan, Dianna Coburn, Christian Capella

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518262
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

The integration of 193nm Lithography is close to full production for the 90nm node technology. With the potential of emerging 193nm lithographic resolution down to 65nm, the quality of 193nm reticles including binary, EAPSM and AAPSM must be outstanding so that low K1 factor reticles may be used in production. One area of concern in the IC industry is haze contamination on the mask once the reticle has been exposed to ArF radiation. In this study, haze was found outside of the pellicle and on the quartz side of the mask. Standard through-pell inspections will typically miss the contamination, yet its severity can ultimately affect mask transmission. For this reason, DuPont Photomasks and Cypress joined forces to quickly decipher how it develops. In this investigation, tests were devised which altered conditions such as mask environment, exposure, traditional and advanced cleaning chemistry. This paper describes the relationship between surface and environmental photochemical reactions, the resultant growth, analysis, and how it is controlled.

Citation Download Citation

Eric Johnstone, Laurent Dieu, Christian Chovino, Julio Reyes, Dongsung Hong, Prakash Krishnan, Dianna Coburn, and Christian Capella "193-nm haze contamination: a close relationship between mask and its environment", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518262

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