CMOS infrared sensors with giant internal signal amplification

Alexander I. Malik; Volodymyr Grimalsky

doi:10.1117/12.508019

6 February 2004 CMOS infrared sensors with giant internal signal amplification

Alexander I. Malik, Volodymyr Grimalsky

Proceedings Volume 5210, Ultrahigh- and High-Speed Photography, Photonics, and Videography; (2004) https://doi.org/10.1117/12.508019
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Theoretical model of a new high-speed metal - insulator - semiconductor (MIS) radiation sensor possessing giant internal signal amplification is proposed to describe the experimentally obtained results. The sensor is fabricated on an Ultra-High Resistivity (UHR) Epi Layer (>10 kΩ cm) on a heavily doped wafer. Theoretical modeling explains the giant value of the internal amplification of the signal that is determined as the ratio of peak values of readout currents and instantaneous photo current. At the integration time about 1 sec the amplification coefficient is of the order of 10⁴ in the case of the external load 10 - 50 kΩ, and it is of the order of 10⁶ when the external load is smaller than 1 kΩ. The sensors operate under non-modulated radiation as well as under an optical signal modulation till 1 GHz.

Citation Download Citation

Alexander I. Malik and Volodymyr Grimalsky "CMOS infrared sensors with giant internal signal amplification", Proc. SPIE 5210, Ultrahigh- and High-Speed Photography, Photonics, and Videography, (6 February 2004); https://doi.org/10.1117/12.508019

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