Paper
9 April 2003 Single-mode laser diode at absolute predetermined wavelength via intracavity Er3+-doped material absorption
Francois E. Auzel
Author Affiliations +
Proceedings Volume 5131, Third GR-I International Conference on New Laser Technologies and Applications; (2003) https://doi.org/10.1117/12.513640
Event: Third GR-I International Conference on New Laser Technologies and Applications, 2003, San Diego, CA, United States
Abstract
Having shown that intra-cavity Er3+ absorption can stabilized one frequency out of the many frequencies emitted by a broad band F.P. laser, we shall see that the wavelength can be determined in an absolute way for InGaAsP F.P. lasers with somewhat different gain curves and mode spacing still with side modes rejection ratios as large as 30 - 40 dB. The gain curve of a multimode Fabry Perot (F.P.) laser is shaped with intra-cavity Er3+-doped single crystal absorption so achieving single mode selection. Absolute wavelengths are predetermined by combinations of crystals of various thicknesses. Finally tentative selection by Er3+-doped amorphous materials such as glass or sol-gel layers are presented indicating new roads for low cost laser at absolute frequency.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francois E. Auzel "Single-mode laser diode at absolute predetermined wavelength via intracavity Er3+-doped material absorption", Proc. SPIE 5131, Third GR-I International Conference on New Laser Technologies and Applications, (9 April 2003); https://doi.org/10.1117/12.513640
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Crystals

Absorption

Semiconductor lasers

Laser stabilization

Erbium

Laser crystals

Glasses

Back to Top