Paper
24 April 2003 Fusion-bonded multilayer SOI for MEMS applications
Kumaresa Somasundram, David Cole, Cormac McNamara, Anne Boyle, Paul McCann, Claire Devine, Andrew Nevin
Author Affiliations +
Proceedings Volume 5116, Smart Sensors, Actuators, and MEMS; (2003) https://doi.org/10.1117/12.502741
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain
Abstract
In this paper, we have presented the novel method of fabricating multiplayer-stacked SOI (MultiBond). Tight thickness and TTV control was achieved, which allowed the bonding of multiple layers of SOI of up to 4-layer stacks. Investigation of the stress showed that having the handle wafer oxidized at the back significantly reduced the stress by compensating for the buried oxide layers. Study was also made on the effect of incorporating different buried layers on the minority carrier lifetime in the SOI layer. Here, a thermally grown buried oxide layer gave the highest carrier lifetime. We have also investigated the surface defect density with different buried layer materials, and found that samples with tungsten silicide as a buried layer had the highest defect density, while an LPCVD TEOS oxide buried layer showed the lowest level.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kumaresa Somasundram, David Cole, Cormac McNamara, Anne Boyle, Paul McCann, Claire Devine, and Andrew Nevin "Fusion-bonded multilayer SOI for MEMS applications", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); https://doi.org/10.1117/12.502741
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Oxides

Low pressure chemical vapor deposition

Semiconducting wafers

Multilayers

Microelectromechanical systems

Silicon

Polishing

Back to Top