Development of strain sensors utilizing giant magnetoresistive and tunneling magnetoresistive devices

Markus Loehndorf; Stefani Dokupil; Manfred Ruehrig; Joachim Wecker; Eckhard Quandt

doi:10.1117/12.500012

24 April 2003 Development of strain sensors utilizing giant magnetoresistive and tunneling magnetoresistive devices

Markus Loehndorf, Stefani Dokupil, Manfred Ruehrig, Joachim Wecker, Eckhard Quandt

Proceedings Volume 5116, Smart Sensors, Actuators, and MEMS; (2003) https://doi.org/10.1117/12.500012
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

This study investigates magnetic layer structures suitable for devices measuring mechanical responses such as stress, strain and pressure. The sensors are based either on giant magnetoresistiance (GMR) structures or on magnetic tunneling junctions (MTJ's) both intentionally prepared with highly magnetostrictive free layer materials. Results for magnetostrictive Fe₅₀Co₅₀ materials or amorphous Co- or Fe-based alloys serving as sensing (or “free”) layers are discussed in view of possible applications. In general, gauge factors in the range of 300-600 have been obtained for strain sensors based on MTJ's, whereas gauge factors of 2-4 are typical for metal based thin film, and 40-180 for piezoresistive strain gauges.

Citation Download Citation

Markus Loehndorf, Stefani Dokupil, Manfred Ruehrig, Joachim Wecker, and Eckhard Quandt "Development of strain sensors utilizing giant magnetoresistive and tunneling magnetoresistive devices", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); https://doi.org/10.1117/12.500012

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