Study of HgCdMnZnTe main-band parameters

Sergey E. Ostapov

doi:10.1117/12.502193

14 April 2003 Study of HgCdMnZnTe main-band parameters

Sergey E. Ostapov

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502193
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

With the k-p method have been calculated the main band parameters of HgCdMnZnTe, such as energy gap, intrinsic carrier concentration, electron effective mass and carrier lifetime.

Citation Download Citation

Sergey E. Ostapov "Study of HgCdMnZnTe main-band parameters", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502193

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