Interplay of phase transformation temperatures and Dingle temperatures in narrow-gap semiconductors

Alexander I. Dmitriev; M. V. Radchenko; George V. Lashkarev; P. E. Butorin

doi:10.1117/12.502195

14 April 2003 Interplay of phase transformation temperatures and Dingle temperatures in narrow-gap semiconductors

Alexander I. Dmitriev, M. V. Radchenko, George V. Lashkarev, P. E. Butorin

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502195
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

The results of neutron diffraction researches in the temperature region 10 - 290 K as well as thermoelectric, magnetic and electric properties of solid solution Pb_0,8Sn_0,2Te of high structural perfection within temperature range (4,2-25) K in magnetic fields up to 4T are represented. The analysis of experimental data testifies to the existence of phase transformations at Tc₁ = (35 ± 5) K, Tc₂ = (110 ± 5) K, Tc₃ = (140 ± 5) K and Tc₄ = (260 ± 5) K. The temperature hysterenis of thermoelectric power is observed in the interval Tc₁ < T < Tc₂. It testifies to the ferroelectrics transition of I kind and lowering of crystal symmetry. Phase transformations at Tc₃ and Tc₄ are transitions of presumable the II kind. The structural perfection improvement of single crystals Pb_0,8Sn_0,2Te results in the shift of the first phase transition temperature Tc₁ from 20 - 25 K to Tc₁ = 35 K. This shift can be described by Dingle temperature - T_D, which is determine a degree of crystal imperfection at T = O K.

Citation Download Citation

Alexander I. Dmitriev, M. V. Radchenko, George V. Lashkarev, and P. E. Butorin "Interplay of phase transformation temperatures and Dingle temperatures in narrow-gap semiconductors", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502195

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