Electronic activity of dislocations and point defects of deformation origin in Hg1-xCdxTe

S. G. Gassan-Zade; G. A. Shepelskii; S. V. Staryi; M. V. Strikha

doi:10.1117/12.502196

14 April 2003 Electronic activity of dislocations and point defects of deformation origin in Hg_1-xCd_xTe

S. G. Gassan-Zade, G. A. Shepelskii, S. V. Staryi, M. V. Strikha

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502196
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

The addition of comparatively low density of dislocations N_dis less than or equal to 10⁷ cm^-2 causes the essential quantitative, and qualitative changes of kinetic coefficients in Hg_1-xCd_xTe (MCT) crystals. In n-type crystals the electrons concentration increases dramatically, and the electrons mobility decreases. Moreover, the characteristic maxima appears in the electrons Hall coefficient R_H and mobility temperature dependency, being an evidence of the existence of the carriers of two types. In p-type crystals we observed the increase of halls concentration and the change of sign of R_H with temperature and magnetic field in the low temperature region (T equal to 4.2 divided by 40 K), together with a transition from activation conductivity to metallic one. It was demonstrated, that these changes are caused not by electronic states of the dislocation core directly, but by the point defects, formed in the process of dislocation movement, and concenrated in the gliding planes. The amount of experimental data can be explained within the idea of the formation of the channels of the different type of conductivity connected with dislocations net, in the matrix of the crystal. This net is formed by tubes of the volume space charge around the dislocation core, penetrating throughout the. The dislocation core itself is formed by the line of cations and anions respectively with the dangling bounds of crystalline lattice.

Citation Download Citation

S. G. Gassan-Zade, G. A. Shepelskii, S. V. Staryi, and M. V. Strikha "Electronic activity of dislocations and point defects of deformation origin in Hg_1-xCd_xTe", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502196

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KEYWORDS

Crystals

Electrons

Temperature metrology

Magnetism

Scattering

Neodymium

Semiconductors

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