Paper
15 October 1984 A1Gaas/Gaas Radiation Hardened Photodiodes
J . J. Wiczer, C. E. Barnes, T. A. Fischer, L. R. Dawson, T. E. Zipperian
Author Affiliations +
Abstract
We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy. These devices were processed with similar photo-lithographic masks and exposed to high energy neutrons, electrons, and photons. Electrical and optical characterizations were completed before and after each irradiation; degradation trends are reported.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J . J. Wiczer, C. E. Barnes, T. A. Fischer, L. R. Dawson, and T. E. Zipperian "A1Gaas/Gaas Radiation Hardened Photodiodes", Proc. SPIE 0506, Fiber Optics in Adverse Environments II, (15 October 1984); https://doi.org/10.1117/12.944929
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Photodiodes

Silicon

Gallium arsenide

Photons

Heterojunctions

X-rays

Active optics

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