In-line e-beam inspection with optimized sampling and newly developed ADC

Masami Ikota; Akihiro Miura; Munenori Fukunishi; Takashi Hiroi; Aritoshi Sugimoto

doi:10.1117/12.485225

15 July 2003 In-line e-beam inspection with optimized sampling and newly developed ADC

Masami Ikota, Akihiro Miura, Munenori Fukunishi, Takashi Hiroi, Aritoshi Sugimoto

Proceedings Volume 5041, Process and Materials Characterization and Diagnostics in IC Manufacturing; (2003) https://doi.org/10.1117/12.485225
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

An electron beam inspection is strongly required for HARI to detect contact and via defects that an optical inspection cannot detect. Conventionally, an e-beam inspection system is used as an analytical tool for checking the process margin. Due to its low throughput speed, it has not been used for in-line QC. Therefore, we optimized the inspection area and developed a new auto defect classification (ADC) to use with e-beam inspection as an in-line inspection tool. A 10% interval scan sampling proved able to estimate defect densities. Inspection could be completed within 1 hour. We specifically adapted the developed ADC for use with e-beam inspection because the voltage contrast images were not sufficiently clear so that classifications could not be made with conventional ADC based on defect geometry. The new ADC used the off-pattern area of the defect to discriminate particles from other voltage contrast defects with an accuracy of greater than 90%. Using sampling optimization and the new ADC, we achieved inspection and auto defect review with throughput of less than 1 and one-half hours. We implemented the system as a procedure for product defect QC and proved its effectiveness for in-line e-beam inspection.

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Masami Ikota, Akihiro Miura, Munenori Fukunishi, Takashi Hiroi, and Aritoshi Sugimoto "In-line e-beam inspection with optimized sampling and newly developed ADC", Proc. SPIE 5041, Process and Materials Characterization and Diagnostics in IC Manufacturing, (15 July 2003); https://doi.org/10.1117/12.485225

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