Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots

Timur M. Burbaev; I. P. Kazakov; Vadim A. Kurbatov; M. M. Rzaev; V. I. Vdovin

doi:10.1117/12.513625

11 June 2003 Growth and characterization of Si-Si_1-xGe_x-GaAs heterostructure with InGaAs quantum dots

Timur M. Burbaev, I. P. Kazakov, Vadim A. Kurbatov, M. M. Rzaev, V. I. Vdovin

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513625
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Heterostructure with In_xGa_1-xAs quantum dots on Si (001) substrate was grown by molecular beam epitaxy (MBE). Step graded Si-Si_1-xGe_x-Ge buffer layers and In_xGa_1-xAs quantum dots (QDs) in GaAs matrix were deposited consecutively in two different MBE systems. Optical and structural characterizations of heterostructure were performed by photoluminescence (PL) at 77K and 300 K and transmission electron microscopy (TEM), respectively. Si-Si_1-xGe_x-GaAs heterostructure with InGaAs QDs exhibited intense photoluminescence in range 1.3 μm at room temperature.

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Timur M. Burbaev, I. P. Kazakov, Vadim A. Kurbatov, M. M. Rzaev, and V. I. Vdovin "Growth and characterization of Si-Si_1-xGe_x-GaAs heterostructure with InGaAs quantum dots", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513625

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