Paper
3 July 2003 Absorption of guided modes in light-emitting diodes
Sven-Silvius Schad, Barbara Neubert, Matthias Seyboth, Frank Habel, Christoph Eichler, Marcus Scherer, Peter Unger, Wolfgang Schmid, Christian Karnutsch, Klaus P. Streubel
Author Affiliations +
Abstract
The absorption of lateral guided modes in light emitting diodes is determined by the photocurrent measurement method. A theory for waveguide dispersion is presented and extended by ray-tracing simulations. Absorption coefficients of InGaN-on-sapphire and AlGaInP-based structures is evaluated by comparison with simulation curves. For nitride-based samples with emission wavelengths of 415 nm and 441 nm an absorption of 7 cm-1 is obtained. It is found that scattering is present in the buffer layer and influences the lateral intensity distribution. The investigated AlGaInP-based sample exhibits an absorption of α = 30 cm-1 at 650 nm emission wavelength.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sven-Silvius Schad, Barbara Neubert, Matthias Seyboth, Frank Habel, Christoph Eichler, Marcus Scherer, Peter Unger, Wolfgang Schmid, Christian Karnutsch, and Klaus P. Streubel "Absorption of guided modes in light-emitting diodes", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.476552
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Cited by 4 scholarly publications.
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KEYWORDS
Absorption

Light emitting diodes

Waveguides

Interfaces

Scattering

Sensors

Dispersion

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