High-speed tunnel injection InGaAs/GaAs quantum dot lasers

Pallab Bhattacharya; S. Ghosh

doi:10.1117/12.482327

25 July 2003 High-speed tunnel injection InGaAs/GaAs quantum dot lasers

Pallab Bhattacharya, S. Ghosh

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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.482327
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

The design, growth, and steady-state and small-signal modulation characteristics of high-speed tunnel injection In_0.4Ga_0.6As/GaAs quantum dot lasers are described and discussed. The measured small-signal modulation bandwidth for I/I_th ~ 3.2 is f_-3dB = 22GHz and the gain compression factor for this frequency response is ε = 7.2s10^-16 cm³. The differential gain obtained from the modulation data is dg/dn ≈ 8.85x10^-14 cm² at room temperature. The value of the K-factor is 0.171ns and the maximum intrinsic modulation bandwidth is 55GHz. The measured high speed data are comparable to, or better than, equivalent quantum well lasers for the first time.

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Pallab Bhattacharya and S. Ghosh "High-speed tunnel injection InGaAs/GaAs quantum dot lasers", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.482327

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