Paper
12 September 2003 Periodically poled thick wafers of near stoichiometric LiTaO3
David Eger, Ariel Bruner, Pnina Shaier, Arie Raizman, Abraham Englander, Pinhas Blau
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Abstract
Near stoichiometric LiTaO3 is investigated for high power quasi-phase-matched optical frequency conversion applications due to its high optical damage threshold and low coercive field. In this work, near stoichiometric undoped and MgO-doped LiTaO3 wafers were characterized by transmission through cross-polarizes, x-ray diffraction and microscope inspection. Periodically inverted domain structures were fabricated in 1 to 4mm thick wafers, by electric field poling in vacuum. Efficiency values between 10% and 16% were obtained for direct frequency conversion of 1 μm to 4 μm light using optical parametric oscillations scheme. The resulting periodically poled structure quality and frequency conversion efficiency seems to be limited by crystalline imperfections of the wafers.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Eger, Ariel Bruner, Pnina Shaier, Arie Raizman, Abraham Englander, and Pinhas Blau "Periodically poled thick wafers of near stoichiometric LiTaO3", Proc. SPIE 4972, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications II, (12 September 2003); https://doi.org/10.1117/12.478541
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers

Crystals

Frequency conversion

Laser damage threshold

Wafer-level optics

Nonlinear crystals

Optical parametric oscillators

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