Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon

Todd W. Du Bosq; Robert E. Peale; Eric W. Nelson; Andrei V. Muravjov; Chris J. Fredricksen

doi:10.1117/12.478952

17 June 2003 Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon

Todd W. Du Bosq, Robert E. Peale, Eric W. Nelson, Andrei V. Muravjov, Chris J. Fredricksen

Proceedings Volume 4968, Solid State Lasers XII; (2003) https://doi.org/10.1117/12.478952
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States

Abstract

A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is ~ 0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.

Citation Download Citation

Todd W. Du Bosq, Robert E. Peale, Eric W. Nelson, Andrei V. Muravjov, and Chris J. Fredricksen "Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon", Proc. SPIE 4968, Solid State Lasers XII, (17 June 2003); https://doi.org/10.1117/12.478952

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