Interferometry system for the mechanical characterization of membranes with silicon oxynitride thin films fabricated by PECVD

Michal Jozwik; Patrick Delobelle; Andrei Sabac; Christophe Gorecki

doi:10.1117/12.468412

25 March 2003 Interferometry system for the mechanical characterization of membranes with silicon oxynitride thin films fabricated by PECVD

Michal Jozwik, Patrick Delobelle, Andrei Sabac, Christophe Gorecki

Author Affiliations +

Proceedings Volume 4945, MEMS/MOEMS: Advances in Photonic Communications, Sensing, Metrology, Packaging and Assembly; (2003) https://doi.org/10.1117/12.468412
Event: Photonics Fabrication Europe, 2002, Bruges, Belgium

Abstract

In this paper, we present a method for the internal stress characterization of silicon membranes with silicon oxynitride thin films (SiO_xN_y) deposited by PECVD (plasma enhanced chemical vacuum deposition). Connecting the interferometric measurements (Twyman-Green interferometer) of out-of-plan displacements of SiO_xN_y-loaded membranes with evaluation of micromechanical parameters (Young's modulus, Poisson ratio) obtained by nanoindentation we evaluated the residual stress of SiO_xN_y thin films via point-wise deflection technique. The magnitude of stress is monitored as a function of the refractive index of SiO_xN_y establishing the relationship between the optical and micromechanical properties of deposited films.

Citation Download Citation

Michal Jozwik, Patrick Delobelle, Andrei Sabac, and Christophe Gorecki "Interferometry system for the mechanical characterization of membranes with silicon oxynitride thin films fabricated by PECVD", Proc. SPIE 4945, MEMS/MOEMS: Advances in Photonic Communications, Sensing, Metrology, Packaging and Assembly, (25 March 2003); https://doi.org/10.1117/12.468412

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